Emission of electrons from the ground and first excited states of self-organized InAs/GaAs quantum dot structures-Reference-Cited by-同舟云学术

Emission of electrons from the ground and first excited states of self-organized InAs/GaAs quantum dot structures

Published:1999-05 Issue:5 Volume:28 Page:486-490
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Brunkov P. N.,Kovsh A. R.,Ustinov V. M.,Musikhin Yu. G.,Ledentsov N. N.,Konnikov S. G.,Polimeni A.,Patanè A.,Main P. C.,Eaves L.,Kapteyn C. M. A.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-999-0099-6.pdf

Reference17 articles.

1. D. Bimberg, M. Grundmann and N.N. Ledentsov, Quantum dot heterostructures (New York: John Wiley, 1998), p. 450.

2. N.N. Ledentsov, M. Grundmann, N. Kirstaedter, J. Christen, R. Heitz, J. Böhrer, F. Heinrichsdorff, D. Bimberg, S.S. Ruvimov, P. Werner, U. Richter, U. Göesele J. Heydenreich, V.M. Ustinov, A.Yu. Egorov, M.V. Maximov, P.S. Kop’ev and Zh.I. Alferov, Proc. 22nd Intl. Conf. on the Physics of Semiconductors, ed. D.J. Lockwood (Singapore: World Scientific, 1995), p. 1855; R. Heitz, M. Veit, N.N. Ledentsov, A. Hoffmann, D. Bimberg, V.M. Ustinov, P.S. Kop’ev and Zh.I. Alferov, Phys. Rev. B 56, 10435 (1997).

3. S. Raymond, S. Fafard, P.J. Poole, A. Wojs, P. Hawrylak, S. Charbonneau, D. Leonard, R. Leon, P.M. Petroff and J.L. Merz, Phys. Rev. B 54, 11548 (1996).

4. F. Adler, M. Geiger, A. Bauknecht, F. Scholz, H. Schweizer, M.H. Pilkuhn, Bohnesorge and A. Forchel, J. Appl. Phys. 80, 4019 (1996).

5. W. Yang, R.R. Lowe-Webb, H. Lee and P.C. Sercel, Phys. Rev. B 56, 13314 (1997).

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