Effect of carrier emission and retrapping on luminescence time decays in InAs/GaAs quantum dots
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.56.13314/fulltext
Reference28 articles.
1. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices
2. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
3. Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs
4. Ultranarrow Luminescence Lines from Single Quantum Dots
5. Temperature and excitation dependence of photoluminescence line shapein InAs/GaAs quantum-dot structures
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