On the relationship between electrical and electro-optical characteristics of InAs/InP quantum dot lasers-Reference-Cited by-同舟云学术

On the relationship between electrical and electro-optical characteristics of InAs/InP quantum dot lasers

Published:2018-08-07 Issue:5 Volume:124 Page:054501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Mikhelashvili V.¹²^ORCID,Eyal O.¹^ORCID,Khanonkin I.¹^ORCID,Banyoudeh S.³,Sichkovskyi V.³,Reithmaier J. P.³,Eisenstein G.¹²

Affiliation:

1. Andrew and Erna Viterbi Faculty of Electrical Engineering, Technion, Haifa 32000, Israel

2. Russell Berrie Nanotechnology Institute, Technion, Haifa 32000, Israel

3. Technische Physik, Institute of Nanostructure Technologies and Analytics, Center of Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germany

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5037961

Reference47 articles.

1. InP based lasers and optical amplifiers with wire-/dot-like active regions

2. Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$m

3. Quantum-Dot Semiconductor Optical Amplifiers

4. Noise characteristics of nonlinear semiconductor optical amplifiers in the Gaussian limit

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