On the process of hole trapping in Ge/Si heterostructures with Ge quantum dots-Reference-Cited by-同舟云学术

On the process of hole trapping in Ge/Si heterostructures with Ge quantum dots

Published:2014-08 Issue:8 Volume:48 Page:1036-1040
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Bloshkin A. A.,Yakimov A. I.,Timofeev V. A.,Dvurechenskii A. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782614080053.pdf

Reference26 articles.

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2. A. I. Yakimov, A. V. Dvurechenskii, A. I. Nikiforov, and G. Yu. Mikhalev, JETP Lett. 80, 321 (2004).

3. D. L. Losse, Appl. Phys. Lett. 21, 54 (1972).

4. V. I. Zubkov, C. M. A. Kapteyn, A. V. Solomonov, and D. Bimberg, J. Phys.: Condens. Matter 17, 2435 (2005).

5. Th. Asperger, Ch. Miesner, K. Bruner, and G. Abstreiter, Phys. Status Solidi B 224, 237 (2001).

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