Photoconductivity of InGaN/GaN multiple quantum well heterostructures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/461/i=1/a=012039/pdf
Reference9 articles.
1. Voltage–capacitance and admittance investigations of electron states in self-organized InAs/GaAs quantum dots
2. Determination of band offsets in strainedInxGa1−xAs∕GaAsquantum wells by capacitance-voltage profiling and Schrödinger-Poisson self-consistent simulation
3. Determination of the valence-band offset and its temperature dependence in isotypic heterojunctions p-AlxGa1−xAs/p-AlyGa1−yAs from C-V measurements
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1. Theoretical model of giant oscillations of the photocurrent in GaAs/AlAs p-i-n diodes;Physica Scripta;2022-08-18
2. Fast photoresponse and high parallel transport in n-type PbTe/PbEuTe quantum wells;Applied Physics Letters;2017-11-06
3. Analysis of InGaN/GaN Multiple Quantum Well Heterostructures by Means of Photoconductivity Measurements;ECS Transactions;2014-03-20
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