Analysis of InGaN/GaN Multiple Quantum Well Heterostructures by Means of Photoconductivity Measurements
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Published:2014-03-20
Issue:4
Volume:61
Page:257-263
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Krause John Robert,Stokes E. B.,Deguzman Panfilo C,Mizuyama Yosuke,Kolli Rajesh
Abstract
A method for the characterization of multiple quantum well (MQW) light emitting diodes(LEDs) is investigated. This method involves taking the I-V curve of the LED while it is irradiated with photons near the absorption edge of the quantum wells within the device under test. A number of features are observed on the I-V curve corresponding to spatial variations within the LED heterostructure. The physical origin of these features and their utility in analysis of the internal structure are discussed.
Publisher
The Electrochemical Society