Carrier relaxation mechanisms and Fermi versus non-Fermi carrier distribution in quantum dot arrays formed by activated alloy phase separation-Reference-Cited by-同舟云学术

Carrier relaxation mechanisms and Fermi versus non-Fermi carrier distribution in quantum dot arrays formed by activated alloy phase separation

Published:2000-11-09 Issue:4 Volume:11 Page:309-313
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Maximov M V,Tsatsul'nikov A F,Sizov D S,Shernyakov Yu M,Zhukov A E,Kovsh A R,Mikhrin S S,Ustinov V M,Alferov Zh I,Ledentsov N N,Bimberg D,Maka T,Torres C M Sotomayor

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/11/i=4/a=323/pdf

Reference16 articles.

1. GaAs-based 1.3 µm InGaAs quantum dot lasers: A status report

2. Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands

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4. Inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laser

5. InAs island‐induced‐strain driven adatom migration during GaAs overlayer growth

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1. InGaN nanoinclusions in an AlGaN matrix;Semiconductors;2008-07

2. The study of lateral carrier transport in structures with InGaN quantum dots in the active region;Semiconductors;2006-05

3. Voltage–capacitance and admittance investigations of electron states in self-organized InAs/GaAs quantum dots;Journal of Physics: Condensed Matter;2005-04-02