Ultralow power switching of Ta2O5/AlOX bilayer synergistic resistive random access memory-Reference-Cited by-同舟云学术

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Ultralow power switching of Ta2O5/AlOX bilayer synergistic resistive random access memory

Published:2020-06-09 Issue:33 Volume:53 Page:335104
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Li Chuang,Wang Fang,Hu Kai,Li Wenxi,Zhao Jinshi,Ren Tianling,Song Zhitang,Zhang Kailiang^ORCID

Funder

National Natural Science Foundation of China

Natural Science Foundation of Tianjin City

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1088/1361-6463/ab8b02/pdf

Reference25 articles.

1. Investigation of the Switching Mechanism in TiO2-Based RRAM: A Two-Dimensional EDX Approach

2. Control the switching mode of Pt/HfO2/TiN RRAM devices by tuning the crystalline state of TiN electrode

3. Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-Based RRAM

4. Drastic reduction of RRAM reset current via plasma oxidization of TaOx film

5. Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. NbOx RRAM performance enhancement by surface modification with Au nanoparticles;Vacuum;2024-09

2. Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems;Nanoscale;2023

3. Low-voltage resistive switching characteristics of nano-bowl-like NiO arrays;SCIENTIA SINICA Physica, Mechanica & Astronomica;2023-01-01

4. Effects of Bottom Electrode Materials on the Resistive Switching Characteristics of HfO2-Based RRAM Devices;Journal of Electronic Materials;2022-12-14

5. Mechanism and Conductance Range Enhancement of TiN/AlO _x /AlO _y /ITO Synaptic Devices;physica status solidi (RRL) – Rapid Research Letters;2022-08-09

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