Low-voltage resistive switching characteristics of nano-bowl-like NiO arrays
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Science China Press., Co. Ltd.
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https://engine.scichina.com/doi/pdf/1CFE773CFB1744E7AB2FBA7F180337D1
Reference27 articles.
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3. Lohn A J, Mickel P R, James C D. Degenerate resistive switching and ultrahigh density storage in resistive memory. Appl Phys Lett, 2014, 105:
4. Pérez E A A L, Guenery P-V, Abouzaid O. Indium-oxide nanoparticles for RRAM devices compatible with CMOS back-end-off-line. Solid-State Electron, 2018, 143: 20-26.
5. Arun N, Kumar K V, Mangababu A. Influence of the bottom metal electrode and gamma irradiation effects on the performance of HfO2-based RRAM devices. Radiat Effect Defect Solids, 2019, 174: 66-75.
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