Drastic reduction of RRAM reset current via plasma oxidization of TaOx film

Author:

Chen Xiaorong,Feng Jie,Bae Dukwon

Funder

Samsung

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference27 articles.

1. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures;Lee;Nat. Mater.,2011

2. Highly uniform switching of tantalum embedded amorphous oxide using self-compliance bipolar resistive switchin;Lee;IEEE Electron Device Lett.,2011

3. Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory;Lee,2012

4. Highly Reliable TaOx ReRAM and Direct Evidence of Redox Reaction Mechanism;Wei,2008

5. High switching endurance in TaOx memristive devices;Yang;Appl. Phys. Lett.,2010

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