Investigation of the Switching Mechanism in TiO2-Based RRAM: A Two-Dimensional EDX Approach-Reference-Cited by-同舟云学术

Investigation of the Switching Mechanism in TiO2-Based RRAM: A Two-Dimensional EDX Approach

Published:2016-07-22 Issue:30 Volume:8 Page:19605-19611
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Carta Daniela¹,Salaoru Iulia¹,Khiat Ali¹,Regoutz Anna¹,Mitterbauer Christoph²,Harrison Nicholas M.³,Prodromakis Themistoklis¹

Affiliation:

1. Nano Group, Southampton Nanofabrication Centre, Department of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, United Kingdom

2. FEI Company, P.O. Box 80066, 5600 KA Eindhoven, The Netherlands

3. Department of Chemistry, Imperial College London, Exhibition Road, London SW7 2AZ, United Kingdom

Funder

Engineering and Physical Sciences Research Council

CHIST-ERA

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

http://pubs.acs.org/doi/pdf/10.1021/acsami.6b04919

Reference40 articles.

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4. Berdan, R.; Vasilaki, E.; Khiat, A.; Indiveri, G.; Serb, A.; Prodromakis, T.Emulating Short-Term Synaptic Dynamics with Memristive Devices.arXiv:1507.02066 (cs.ET)1–17.

5. Resistive switching and changes in microstructure

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