Abstract
Abstract
The influence of chamber pressure and Si-doping on the growth rate, surface morphology and Hall mobility was investigated for β-Ga2O3 thin films homoepitaxially grown by metalorganic vapor phase epitaxy on Mg-doped β-Ga2O3 (100) substrates with 4° miscut. Transitions from step-bunching to step-flow to 2D island growth modes were achieved by varying the chamber pressure from 10 mbar to 40 mbar and/or by varying the O2/Ga ratio. High-quality β-Ga2O3 homoepitaxial thin films with a high electron mobility of 153 cm2 Vs−1 have been obtained at a chamber pressure of 25 mbar and a growth rate of 3.6 nm min−1. The Si-doped films show electron concentrations in the range of 1 × 1017 to 2 × 1019 cm−3. When increasing the chamber pressure to 40 mbar step-flow growth mode and high charge carrier mobility can only be preserved by adjusting the O2/Ga ratio and increasing the Ar push gas flow. Secondary ion mass spectrometry and Hall measurements for Si and electron concentration, respectively, revealed Si compensation at higher tetraethyl orthosilicate flux.
Funder
European Regional Development Fund
Bundesministerium für Bildung und Forschung
Deutsche Forschungsgemeinschaft
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
42 articles.
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