Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4985855
Reference33 articles.
1. β-(AlxGa1−x)2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy
2. Large-size β-Ga2O3 single crystals and wafers
3. Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga2O3: Incorporation of Ga vs. Ga2O desorption
4. Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on β-Ga2O3 (010) substrates by molecular beam epitaxy
5. Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
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