Optical and electrical properties of Ti-doped β-Ga2O3 (Ti3+:β-Ga2O3) bulk crystals grown by floating zone method
Author:
Funder
Division of Materials Research
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6463/aba3eb/pdf
Reference44 articles.
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1. Study on the effects of VO and Hi on the absorption spectrum and conductivity of Ti doped β-Ga2O3;Materials Today Communications;2024-06
2. Redshift and amplitude increase in the dielectric function of corundum-like α-(TixGa1−x)2O3;Applied Physics Letters;2023-02-27
3. Electrical and optical properties and defects of (100)- and (001)-oriented V-doped β-Ga2O3 crystals grown by EFG;Materials Science in Semiconductor Processing;2023-01
4. Controllability of β-Ga2O3 single crystal conductivity by V doping;CrystEngComm;2022
5. Electrical and Optical Properties and Defects of (100) and (001) V-Doped Β-Ga2o3 Crystals Grown by Efg;SSRN Electronic Journal;2022
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