Controllability of β-Ga<sub>2</sub>O<sub>3</sub> single crystal conductivity by V doping-Reference-Cited by-同舟云学术

Controllability of β-Ga₂O₃ single crystal conductivity by V doping

Published:2022 Issue:31 Volume:24 Page:5588-5596
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Li Pengkun¹²^ORCID,Han Xueli¹²,Chen Duanyang¹^ORCID,Sai Qinglin¹^ORCID,Qi Hongji¹³

Affiliation:

1. Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

3. Hangzhou Institute of Optics and Fine Mechanics, Hangzhou 311421, China

Abstract

Strategy for realizing the tunability of the effective carrier concentration of β-Ga2O3 single crystals using V as a dopant.

Funder

Youth Innovation Promotion Association of the Chinese Academy of Sciences

National Natural Science Foundation of China

Science and Technology Commission of Shanghai Municipality

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CE/D2CE00418F

Reference52 articles.

1. Polarization assisted self-powered GaN-based UV photodetector with high responsivity

2. Enhanced photodetector performance in gold nanoparticle decorated ZnO microrods

3. Progress in one-dimensional nanostructures

4. Physicochemical and photo-electrochemical characterization of novel N-doped nanocomposite ZrO2/TiO2 photoanode towards technology of dye-sensitized solar cells

5. Multiple-quantum-well-induced unipolar carrier transport multiplication in AlGaN solar-blind ultraviolet photodiode

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