Effects of Ta concentration on microstructure, optical and optoelectronic properties of Ga2O3:Ta films-Reference-Cited by-同舟云学术

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Effects of Ta concentration on microstructure, optical and optoelectronic properties of Ga2O3:Ta films

Published:2024-06 Issue: Volume:224 Page:113142
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Meng Xue^ORCID,Deng Jinxiang^ORCID,Li Ruidong,Zhang Qing,Tian Kun,Xu Jiawei,Yang Xiaolei,Meng Lingjia^ORCID,Du Juan^ORCID,Wang Guisheng

Publisher

Elsevier BV

Reference48 articles.

1. Review of gallium-oxide-based solar-blind ultraviolet photodetectors;Chen;Photon. Res.,2019

2. Investigation on the optical and electrical performance of aluminium doped gallium oxide thin films;Mandal;Opt. Quant. Electron.,2022

3. Study on oxygen vacancies in gallium oxide nanostructures;Che;J. Mater. Sci. Mater. Electron.,2023

4. Tackling disorder in γ-Ga2O3;Ratcliff;Adv. Mater.,2022

5. Oxygen vacancies modulating the photodetector performances in ε-Ga2O3 thin films;Li;J. Mater. Chem. C,2021

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mica-based β-Ga2O3 photodetector: Enabling solar-blind deep-ultraviolet detection with flexibility and transparency;Materials Today Communications;2024-08

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