Oxygen vacancies modulating the photodetector performances in ε-Ga2O3 thin films-Reference-Cited by-同舟云学术

Oxygen vacancies modulating the photodetector performances in ε-Ga2O3 thin films

Published:2021 Issue:16 Volume:9 Page:5437-5444
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Li Shan¹²³⁴⁵^ORCID,Yue Jianying¹²³⁴⁵,Ji Xueqiang¹²³⁴⁵,Lu Chao¹²³⁴⁵,Yan Zuyong¹²³⁴⁵,Li Peigang¹²³⁴⁵,Guo Daoyou⁶⁷⁸⁹¹⁰^ORCID,Wu Zhenping¹²³⁴⁵^ORCID,Tang Weihua¹²³⁴⁵^ORCID

Affiliation:

1. Laboratory of Information Functional Materials and Devices

2. School of Science

3. State Key Laboratory of Information Photonics and Optical Communications

4. Beijing University of Posts and Telecommunications

5. Beijing 100876

6. Center for Optoelectronics Materials and Devices & Key Laboratory of Optical Field Manipulation of Zhejiang Province

7. Department of Physics

8. Zhejiang Sci-Tech University

9. Hangzhou 310018

10. China

Abstract

The oxygen vacancies regulated via the lattice O atom formation/desorption process under oxidizing/reducing annealing reveal an effective modulating effect on the ε-Ga₂O₃ photodetector performances.

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC00616A

Reference54 articles.

1. Polymorphism of Ga2O3 and the System Ga2O3—H2O

2. A review of Ga2O3materials, processing, and devices