DC performance improvement of nanochannel AlGaN/AlN/GaN HEMTs with reduced OFF-state leakage current by post-gate annealing modulation-Reference-Cited by-同舟云学术

DC performance improvement of nanochannel AlGaN/AlN/GaN HEMTs with reduced OFF-state leakage current by post-gate annealing modulation

Published:2021-07-26 Issue:9 Volume:36 Page:095003
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Mazumder Soumen^ORCID,Wu Zhan-Gao,Pan Po Cheng,Li Ssu-Hsien,Wang Yeong-Her^ORCID

Funder

Ministry of Science and Technology, Taiwan

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1088/1361-6641/ac05df/pdf

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3. GaN, AIN, and InN: a review;Strite;J. Vac. Sci. Technol. B,1992

4. Performance enhancement in N2 plasma modified AlGaN/AlN/GaN MOS-HEMT using HfAlOX gate dielectric with Γ-shaped gate engineering;Yang;Materials,2021

5. Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures;Ambacher;J. Phys.: Condens. Matter,2002

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