Abstract
The surface condition under the gate is critically important to improve the device characteristics and thus reliability of the AlGaN/GaN high electron mobility transistor (HEMT). In this report, we demonstrated the reduction of leakage current (IG) with betterment of current collapse in Al0.25Ga0.75N/GaN Schottky gate (SG)-HEMT by improving metal/GaN interface using optimized ultraviolet-ozone (UV/O3) plasma treatment with post metal annealing modulation at 450 °C. The x-ray photoelectron spectroscopy (XPS) was used to verify the formation of GaOXNY layer at the metal/GaN interface. Owing to, the screening of the internal/external polarization charges by 10 min. UV/O3 surface plasma treatment and incremental increase of Schottky barrier height (Φ
B) with post metal annealing modulation, resulted in the positive shifting of threshold voltage (VTH) in SG-HEMT. Due to the combined effects of the UV/O3 plasma treatment and metal annealing modulation, the magnitude of the interface trap density were effectively reduced to one order of magnitude, which further improved the current collapse significantly in SG-HEMT to 2.5% from 12.2%. The 10 min. UV/O3 treated SG-HEMT with PMA modulation exhibited decent performance with an IDMAX of 620 mA mm−1, a GMMAX of 135 mS mm−1, a threshold voltage (VTH) of −1.8 V, a higher ION/IOFF ratio of approximately
1.2
×
10
9
,
a subthreshold swing (SS) of 83 mV dec−1, with a low gate leakage current of
10
−
9
Amm
−
1
.
Funder
Ministry of Science and Technology, Taiwan
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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