Electron drift velocity in AlGaN/GaN channel at high electric fields
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1626258
Reference18 articles.
1. Progress in High-Power, High Frequency AlGaN/GaN HEMTs
2. GaN: Processing, defects, and devices
3. Optical study of high-biased AlGaN/GaN high-electron-mobility transistors
4. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
5. An insulator-lined silicon substrate-via technology with high aspect ratio
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