Optical study of high-biased AlGaN/GaN high-electron-mobility transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1481973
Reference16 articles.
1. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
2. GaN: Processing, defects, and devices
3. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
4. Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire
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