Influence of Post Fabrication Annealing on Device Performance of Inaln/Gan High Electron Mobility Transistors
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Publisher
Elsevier BV
Reference25 articles.
1. High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a "Buffer-Free" Heterostructure;B Hult;IEEE Electron Device Letters,2022
2. Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric;H.-S Kim;IEEE Electron Device Letters,2017
3. GaN-Based RF Power Devices and Amplifiers;U K Mishra;Proceedings of the IEEE,2008
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