Abstract
Abstract
In this paper, we investigate the influence of Poole–Frenkel effect (PFE) on the dynamic R
ON transients in C-doped p-GaN HEMTs. To this aim, we perform a characterization of the dynamic R
ON transients acquired during OFF-state stress (i.e. V
GS,STR = 0 V < V
T, V
DS,STR = 25–125 V) and we interpret the results with the aid of numerical simulations. We find that dynamic R
ON transients at room temperature accelerate with V
DS,STR
1/2, which is signature of PFE, as further confirmed by the simultaneous decrease of the activation energy (E
A) extracted from the Arrhenius plot of the dynamic R
ON transients at V
DS,STR = 50 V and T = 30 °C–110 °C. Results obtained by means of calibrated numerical simulations reproduce the exponential dependence of transients time constants (τ) on V
DS,STR
1/2 and consequent E
A reduction only when including the PFE-enhancement model of hole emission from dominant acceptor traps in the buffer related to C doping. This result is consistent with the ‘hole-redistribution’ model that considers hole emission from acceptor traps (rather than electron capture) as the mechanism underlying dynamic R
ON increase during OFF-state stress.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
8 articles.
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