Evidence of Carbon Doping Effect on VTH Drift and Dynamic-RON of 100V p-GaN Gate AlGaN/GaN HEMTs
Author:
Affiliation:
1. University of Modena and Reggio Emilia,Dipartimento di Ingegneria “Enzo Ferrari”,Modena,Italy,41125
2. STMicroelectronics,Catania,Italy,95121
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10117585.pdf?arnumber=10117585
Reference16 articles.
1. Correlation between dynamic Rdsou transients and Carbon related buffer traps in AlGaN/GaN HEMTs
2. Experimental and Numerical Analysis of Hole Emission Process From Carbon-Related Traps in GaN Buffer Layers
3. Experimental and numerical investigation of Poole–Frenkel effect on dynamic R ON transients in C-doped p-GaN HEMTs
4. Determination of carbon-related trap energy level in (Al)GaN buffers for high electron mobility transistors through a room-temperature approach
5. Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs
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