“Hole Redistribution” Model Explaining the Thermally Activated R ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9332190/09318009.pdf?arnumber=9318009
Cited by 40 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Dynamic Behavior of Threshold Voltage and I D–V DS Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect;IEEE Transactions on Electron Devices;2023-12
2. Numerical Analysis of Impact Ionization Effects on Hard Switching in AlGaN/GaN HEMTs;IEEE Transactions on Electron Devices;2023-12
3. Physical Insights Into Nano-Second Time Scale Cyclic Stress Induced Dynamic R on Behavior in AlGaN/GaN HEMTs—Part I;IEEE Transactions on Electron Devices;2023-12
4. Impact of Buffer Capacitance-Induced Trap Charging on Electric Field Distribution and Breakdown Voltage of AlGaN/GaN HEMTs on Carbon-Doped GaN-on-Si;IEEE Transactions on Electron Devices;2023-12
5. Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic R ON Behavior in AlGaN/GaN HEMTs—Part II;IEEE Transactions on Electron Devices;2023-12
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