Mechanisms of Step-Stress Degradation in Carbon-Doped 0.15-μm AlGaN/GaN HEMTs for Power RF Applications-Reference-Cited by-同舟云学术

Mechanisms of Step-Stress Degradation in Carbon-Doped 0.15-μm AlGaN/GaN HEMTs for Power RF Applications

Published:2023-12 Issue:4 Volume:23 Page:453-460
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Zagni Nicolò¹^ORCID,Gao Veronica Zhan²^ORCID,Verzellesi Giovanni³^ORCID,Chini Alessandro¹^ORCID,Pantellini Alessio⁴,Natali Marco⁴,Lucibello Andrea⁴,Latessa Luca⁴,Lanzieri Claudio⁴,De Santi Carlo²^ORCID,Meneghini Matteo²^ORCID,Meneghesso Gaudenzio²^ORCID,Zanoni Enrico²^ORCID

Affiliation:

1. Department of Engineering “Enzo Ferrari,”, University of Modena and Reggio Emilia, Modena, Italy

2. Department of Information Engineering, University of Padova, Padua, Italy

3. Department of Sciences and Methods for Engineering and the EN&TECH Center, University of Modena and Reggio Emilia, Reggio Emilia, Italy

4. Leonardo Company, Rome, Italy

Funder

Ministero dell'Universit? e della Ricerca

U.S. Office of Naval Research

European Space Agency

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject