GaN HEMTs for 5G Base Station Applications
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8601505/8614478/08614588.pdf?arnumber=8614588
Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrical and Small-Signal Characteristics Degradation of RF GaN HEMTs Under Repetitive ESD Stresses;IEEE Transactions on Electron Devices;2024-08
2. High Power Linearity and Low Leakage Current of AlN/GaN/InGaN Coupling Channel HEMTs With N₂O Oxidation Treatment;IEEE Electron Device Letters;2024-06
3. Ultralow RF Loss for Si-Based GaN Materials with a Variable Power Phosphorus Ion Implantation Method;Crystal Growth & Design;2024-05-13
4. Effect of Deposition Technique of SiNx Passivation Layer on the Electrical DC and RF Properties of AlGaN/GaN HEMTs;Transactions on Electrical and Electronic Materials;2023-12-07
5. Mechanisms of Step-Stress Degradation in Carbon-Doped 0.15-μm AlGaN/GaN HEMTs for Power RF Applications;IEEE Transactions on Device and Materials Reliability;2023-12
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