Effect of Deposition Technique of SiNx Passivation Layer on the Electrical DC and RF Properties of AlGaN/GaN HEMTs
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s42341-023-00492-2.pdf
Reference20 articles.
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2. S.B. Lisesivdin, S. Demirezen, M.D. Caliskan, A. Yildiz, M. Kasap, S. Ozcelik, E. Ozbay, Growth parameter investigation of AL0.25Ga0.75n/Gan/ALN heterostructures with Hall effect measurements. Semicond. Sci. Technol. 23(9), 095008 (2008). https://doi.org/10.1088/0268-1242/23/9/095008
3. S.B. Lisesivdin, A. Yildiz, S. Acar, M. Kasap, S. Ozcelik, E. Ozbay, Electronic Transport Characterization of algan∕gan heterostructures using quantitative mobility spectrum analysis. Appl. Phys. Lett. (2007). https://doi.org/10.1063/1.2778453
4. U.K. Mishra, P. Parikh, Y.F. Wu, Algan/Gan HEMTs-an overview of device operation and applications. Proc. IEEE 90(6), 1022–1031 (2002). https://doi.org/10.1109/jproc.2002.1021567
5. H. Lu, B. Hou, L. Yang, M. Zhang, L. Deng, M. Wu, Z. Si, S. Huang, X. Ma, Y. Hao, High RF performance gan-on-si hemts with passivation implanted termination. IEEE Electron Device Lett. 43(2), 188–191 (2022). https://doi.org/10.1109/led.2021.3135703
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