Electronic transport characterization of AlGaN∕GaN heterostructures using quantitative mobility spectrum analysis
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2778453
Reference23 articles.
1. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
2. Measured microwave power performance of AlGaN/GaN MODFET
3. Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V
4. High-temperature performance of AlGaN/GaN HFETs on SiC substrates
5. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
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