Characterization of GaN HEMT at Cryogenic Temperatures-Reference-Cited by-同舟云学术

Characterization of GaN HEMT at Cryogenic Temperatures

Published:2021-12-17 Issue: Volume: Page:
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Container-title:2021 IEEE MTT-S International Microwave and RF Conference (IMARC)
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Author:

Kushwaha Pragya¹,Sinha Santanu¹,Karmakar Chiranjit K¹,Sahu Manish¹,Kaneriya Rakesh K¹,Kumar Punam Pradeep¹,Bhattacharya Apurba¹

Affiliation:

1. Space Applications Centre, Indian Space Research Organisation,Micro Electronics Group, Electronic Support Services Area,Ahmedabad,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9714514/9714521/09714643.pdf?arnumber=9714643

Reference16 articles.

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3. Experimental analysis of HEMT behavior under low-temperature conditions

4. Kink Effect in AlGaN/GaN HEMTs Induced by Drain and Gate Pumping

5. RF, Analog and Mixed Signal Technologies for Communication ICs-An ITRS Perspec- tive;huang;IEEE Bipolar/BiCMOS Circuits Technol Meeting (BCTM),2006

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