The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs
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Published:2020-08-24
Issue:4
Volume:19
Page:1555-1563
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ISSN:1569-8025
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Container-title:Journal of Computational Electronics
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language:en
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Short-container-title:J Comput Electron
Author:
Zagni NicolòORCID, Chini AlessandroORCID, Puglisi Francesco MariaORCID, Pavan PaoloORCID, Verzellesi GiovanniORCID
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
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