The Transition of Threshold Voltage Shift of Al2O3/Si3N4 AlGaN/GaN MIS-HEMTs Under Negative Gate Bias Stress From DC to AC-Reference-Cited by-同舟云学术

The Transition of Threshold Voltage Shift of Al₂O₃/Si₃N₄ AlGaN/GaN MIS-HEMTs Under Negative Gate Bias Stress From DC to AC

Published:2024-03 Issue:3 Volume:71 Page:1792-1797
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lee Ya-Huan¹,Chang Kai-Chun¹,Tai Mao-Chou²^ORCID,Wang Yu-Xuan³,Lin Hsin-Ni¹,Yeh Yu-Hsuan¹,Kuo Hung-Ming¹^ORCID,Tsai Xin-Ying⁴,Lee Jason⁵,Huang I-Yu⁶,Chang Ting-Chang⁷^ORCID,Sze Simon⁸

Affiliation:

1. Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan

2. Department of Photonics, National Sun Yat-sen University, Kaohsiung, Taiwan

3. Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

4. Department of Materials and Optoelectronic Science, Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

5. Department of Computer Science, Boston University, Boston, MA, USA

6. College of Semiconductor and Advanced Technology Research, National Sun Yat-sen University, Kaohsiung, Taiwan

7. Department of Physics and the Center of Crystal Research, National Sun Yat-sen University, Kaohsiung, Taiwan

8. Department of Electronics Engineering and the Institute of Electronics, National Chiao-Tung University, Hsinchu, Taiwan

Funder

Taiwan Semiconductor Research Institute

National Science and Technology Council

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10457976/10411992.pdf?arnumber=10411992

Reference49 articles.

1. GaN on Si Technologies for Power Switching Devices

2. Effects of surface traps on breakdown voltage and switching speed of GaN power switching HEMTs

3. A high-power AlGaN/GaN heterojunction field-effect transistor

4. AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

5. Study of bilayer Al2O3/in-situ SiNx dielectric stacks for gate modulation in ultrathin-barrier AlGaN/GaN MIS-HEMTs

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