GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap-Reference-Cited by-同舟云学术

GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

Published:2018-02-05 Issue:3 Volume:11 Page:034102
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Dogmus Ezgi,Zegaoui Malek,Medjdoub Farid

Funder

Agence Nationale de la Recherche

H2020 European Research Council

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/11/i=3/a=034102/pdf

Reference30 articles.

1. Gallium nitride devices for power electronic applications

2. Power GaN Devices

3. AlGaN/GaN HEMTs-an overview of device operation and applications

4. High-Performance Low-Leakage-Current AlN/GaN HEMTs Grown on Silicon Substrate

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Research Progress in Breakdown Enhancement for GaN-Based High-Electron-Mobility Transistors;Electronics;2023-10-27

2. Vertical GaN MOSFET Power Devices;Micromachines;2023-10-16

3. Low-Loss MIM Capacitor on Thick SiO₂ Dielectric for GaN-on-Si Substrates with Standard and Elevated Top Electrode Configurations;2023 53rd European Microwave Conference (EuMC);2023-09-19

4. Effect of Local Substrate Removal and Backside Al Heat Dissipation Layer on GaN-on-Si Device RF Performance;ECS Journal of Solid State Science and Technology;2023-09-01

5. Simulation analysis of electrical characteristics of P-gate enhanced HEMT with C-doped buffer layer;AIP Advances;2023-09-01