Separation of stress-free AlN/SiC thin films from Si substrate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/741/i=1/a=012034/pdf
Reference9 articles.
1. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
2. Metal semiconductor field effect transistor based on single crystal GaN
3. Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates
4. Gallium nitride growth on sapphire/GaN templates at high pressure and high temperatures
5. AlN and GaN epitaxial heterojunctions on 6H–SiC(0001): Valence band offsets and polarization fields
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. SiC/Si as a New Platform for Growth of Wide-Bandgap Semiconductors;Mechanics and Control of Solids and Structures;2022
2. A study of the GaN/Si(111) epitaxial structures grown by PA MBE via coalescence overgrowth of GaN nanocolumns;Journal of Physics: Conference Series;2021-03-01
3. The study of the AlN/Si(111) epitaxial structures grown by PA MBE via coalescence overgrowth of AlN nanocolumns;Journal of Physics: Conference Series;2020-12-01
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