Gallium nitride growth on sapphire/GaN templates at high pressure and high temperatures-Reference-Cited by-同舟云学术

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Gallium nitride growth on sapphire/GaN templates at high pressure and high temperatures

Published:2005-01 Issue:1-2 Volume:274 Page:55-64
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Boćkowski M.,Grzegory I.,Krukowski S.,Łucznik B.,Wróblewski M.,Kamler G.,Borysiuk J.,Kwiatkowski P.,Jasik K.,Porowski S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference7 articles.

1. Congruent melting of gallium nitride at 6 GPa and its application to single-crystal growth

2. Directional crystallization of GaN on high-pressure solution grown substrates by growth from solution and HVPE

3. Deposition of bulk GaN from solution in gallium under high N2 pressure on silicon carbide and sapphire substrates

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1. Substrates in the Synthesis of Two-Dimensional Materials via Chemical Vapor Deposition;Chemistry of Materials;2020-12-09

2. Separation of stress-free AlN/SiC thin films from Si substrate;Journal of Physics: Conference Series;2016-08

3. High-Pressure, High-Temperature Solution Growth and Ammonothermal Synthesis of Gallium Nitride Crystals;Handbook of Crystal Growth;2015

4. Nitride and Other III-V Compounds;Compound Semiconductor Bulk Materials and Characterizations;2012-12

5. Interactions of Dislocations during Epitaxial Growth of SiC and GaN;Crystal Growth Technology;2010-07-19

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