A study of the GaN/Si(111) epitaxial structures grown by PA MBE via coalescence overgrowth of GaN nanocolumns

Abstract

Abstract The GaN/Si(111) epitaxial structures were synthesized by coalescence overgrowth of GaN nanocolumns using the plasma-assisted molecular beam epitaxy (PA-MBE) technique. Such epitaxial structures can be used as a buffer layer for obtaining high quality GaN epilayers. Structural, electrical and chemical properties of these samples were studied. It was demonstrated that KOH etching of the grown GaN/Si(111) samples results in the separation of the GaN epilayer from the substrate.