Analytical modelling of drain-current characteristics of AlGaN/GaN HFETs with full incorporation of steady-state velocity overshoot
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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1. A novel method to determine bias-dependent source and drain parasitic series resistances in AlGaN/GaN high electron mobility transistors;Solid-State Electronics;2024-10
2. Quantum coupling and hot-carriers impacts on excitons and optical spectrum of GaN devices;Physica E: Low-dimensional Systems and Nanostructures;2022-05
3. Modeling source–drain voltage-dependent energy needed for emission or absorption of a photon in GaN devices;Applied Physics A;2022-01-25
4. Correlation between sidewall surface states and off-state breakdown voltage of AlGaN/GaN HFETs;Journal of Applied Physics;2021-09-21
5. Quantum coupling and electrothermal effects on electron transport in high-electron mobility transistors;Pramana;2019-05-08
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