Quantum coupling and hot-carriers impacts on excitons and optical spectrum of GaN devices
Author:
Funder
NSFC
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
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3. Room temperature photon induced electrical tuning of intersubband transition in GaN HEMT for terahertz applications;Kaneriya;Microelectron. Eng.,2020
4. Effective temperature measurements of AlGaN/GaN-based HEMT under various load lines using micro-Raman technique;Kim;Solid State Electron.,2006
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1. Physical Modeling of Threshold Voltage Instability in GaN High‐Electron‐Mobility Transistors;physica status solidi (a);2024-07-03
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