Correlation between sidewall surface states and off-state breakdown voltage of AlGaN/GaN HFETs
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, Concordia University, Montreal, QC H3G-1M8, Canada
Funder
Natural Sciences and Engineering Research Council of Canada
CMC Microsystems
Mitacs
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0060688
Reference40 articles.
1. AlGaN/GaN HEMTs-an overview of device operation and applications
2. Off-State Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique
3. Growth and applications of Group III-nitrides
4. Thermal conductivity of GaN
5. Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate
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1. A Comparative Study on the Effects of Planarity of Access Region on the Low-Frequency Noise Performance of InAlN/GaN HFETs;IEEE Journal of the Electron Devices Society;2024
2. Impact of the Scaling of LGS and LG on the On-State Breakdown Voltage of InAlN/GaN HFETs With Localized Fin Under the Gate Electrode;IEEE Journal of the Electron Devices Society;2024
3. The isolation feature geometry dependence of reverse gate-leakage current of AlGaN/GaN HFETs;Physica Scripta;2023-08-09
4. Study of electrical transport properties of GaN-based side-gate heterostructure transistors;Applied Physics Letters;2022-11-21
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