Study of electrical transport properties of GaN-based side-gate heterostructure transistors-Reference-Cited by-同舟云学术

Study of electrical transport properties of GaN-based side-gate heterostructure transistors

Published:2022-11-21 Issue:21 Volume:121 Page:212107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhou Heng¹^ORCID,Lv Yuanjie²^ORCID,Wang Mingyan¹^ORCID,Cui Peng³,Lin Zhaojun¹³^ORCID

Affiliation:

1. School of Microelectronics, Shandong University, Jinan 250101, China

2. National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

3. Institute of Novel Semiconductors, Shandong University, Jinan 250100, China

Abstract

In this study, GaN-based side-gate heterostructure transistors (SGHTs) with two electrical operating modes were fabricated. In the first operating mode, the SGHT was utilized as a common-source voltage amplifier with low power consumption and a broad input signal range. Analysis of the main scattering mechanisms affecting the electrical transport of two-dimensional electron gas (2DEG) in the channel revealed that polar optical phonon scattering and polarization Coulomb field (PCF) scattering play dominant roles under different side-gate voltages. In addition, channel current modulation of 2DEG electron mobility is primarily attributed to PCF scattering. Due to PCF scattering, the channel width also modulates the threshold voltage in this mode of operation. Moreover, in the second operating mode, the SGHT functioned as a traditional GaN high electron mobility transistor, allowing for electrically modulated threshold voltage and transconductance.

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0124626

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