Author:
Zeng Changkun,Xu Weizong,Xia Yuanyang,Wang Ke,Ren Fangfang,Zhou Dong,Li Yiheng,Zhu Tinggang,Chen Dunjun,Zhang Rong,Zheng Youdou,Lu Hai
Abstract
Abstract
Narrow gate margin has been the critical limiting factor for the p-gate normally-off GaN HEMTs, imposing significant challenges in both gate drive design and gate reliability. In this work, by developing dopant-free p-type polarization doping technique in composition-graded InGaN layer, high-quality Schottky contact between the gate metal and cap layer was demonstrated, achieving excellent gate current blocking performance (10–6 mA mm−1) after the turning-on of the gate heterojunction structure. Resultantly, normally-off GaN HEMTs with enhanced gate breakdown voltage up to 15.2 V was realized, being especially beneficial for the simplification of gate drive design and the safe operation of gate terminal.
Funder
National Natural Science Foundation of China
National Key R&D Program of China
Subject
General Physics and Astronomy,General Engineering
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献