Lattice-matched AlInN/GaN multi-channel heterostructure and HEMTs with low on-resistance-Reference-Cited by-同舟云学术

Lattice-matched AlInN/GaN multi-channel heterostructure and HEMTs with low on-resistance

Published:2021-09-20 Issue:12 Volume:119 Page:122104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Li Ang¹²^ORCID,Wang Chong¹²,Xu Shengrui¹²^ORCID,Zheng Xuefeng¹²^ORCID,He Yunlong¹²^ORCID,Ma Xiaohua¹²,Lu Xiaoli¹²,Zhang Jinfeng¹²,Liu Kai¹²,Zhao Yaopeng¹²^ORCID,Hao Yue¹²

Affiliation:

1. Key Lab of Wide Band Gap Semiconductor Materials and Devices, Xi'an 710071, China

2. The School of Microelectronics, Xidian University, Xi'an 710071, China

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Civil Aerospace Pre-Research Plan of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0063638

Reference24 articles.

1. kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800 V and 100 kHz

2. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

3. F. Medjdoub , J.F. Carlin , M. Gonschorek , E. Feltin , M. A. Py , D. Ducatteau , C. Gaquiere , N. Grandjean , and E. Kohn , IEEE International Electron Devices Meeting (IEDM) (IEEE 2006), p. 927.

4. AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

5. MBE growth of high conductivity single and multiple AlN/GaN heterojunctions

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