A comparative analysis of GaN and InGaN/GaN coupling channel HEMTs on silicon carbide substrate for high linear RF applications

Author:

Murugapandiyan P.,Kalva Sri Rama Krishna,Rajyalakshmi V.,Princy B. Anni,Tarauni Yusuf U.,Fletcher Augustine,Wasim Mohd

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Biomaterials

Reference42 articles.

1. A review of GaN HEMT broadband power amplifiers;Husna Hamza;AEU - International Journal of Electronics and Communications,2020

2. Static and dynamic characteristics of Lg 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications;Murugapandiyan;J. Sci.: Advanced Materials and Devices,2017

3. Breakdown voltage enhancement of gate field plate Al0.295Ga0.705N/GaN HEMTs;Murugapandiyan;Int. J. Electron.,2020

4. Influence analysis of back-barrier and ain substrate on the high-temperature performance of an E-mode Mg-doped In0.2Ga0.8N capped gate high electron mobility transistor for high-power switching applications: a simulation study;Tarauni;J. Electron. Mater.,2022

5. UWBG AlN/β-Ga2O3 HEMT on silicon carbide substrate for low loss portable power converters and RF applications;Baskaran;Silicon,2022

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