UWBG AlN/β-Ga2O3 HEMT on Silicon Carbide Substrate for Low Loss Portable Power Converters and RF Applications
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-01846-w.pdf
Reference42 articles.
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3. Ma C-T, Gu Z-H (2019) Review of GaN HEMT applications in power converters over 500 W. Electronics 8:1401. https://doi.org/10.3390/electronics8121401
4. Husna Hamza K, Nirmal D (2019) A review of GaN HEMT broad band power amplifiers. Int J Electron Commun. https://doi.org/10.1016/j.aeue.2019.153040
5. Nanjo T, Takeuchi M, Suita M, Abe Y, Oishi T, Tokuda Y, Aoyagi Y (2008) First operation of AlGaN channel high electron mobility transistors. Appl Phys Express:011101. https://doi.org/10.1143/APEX.1.011101
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