Realization of an ultra-scaled novel Ga2O3 FinFET for sub-terahertz applications

Abstract

Abstract This study involves in-depth simulations focused on gate-electrode and channel-doping engineering in ultra-scaled Ga2O3 FinFETs. Silvaco TCAD software was employed as a simulation tool to explore the suitability of these designs for sub-terahertz applications. The focus of the present study is the simultaneous enhancement in current drivability as well as the reduction in parasitic capacitances without any trade-off, to achieve superior performance for sub-terahertz applications. Along with the analog characteristics of the proposed device, various critical high-frequency figures of merit have also been evaluated. Furthermore, scattering parameters have also been studied with variations in frequency to gain insights into the performance of the proposed device at high frequencies. In addition, a thorough comparison of the proposed device with the conventional device has been carried out. It has been demonstrated that the proposed device is an excellent contender for ultra-high-frequency applications with remarkable high-frequency figures of merit.