MBE growth of high conductivity single and multiple AlN/GaN heterojunctions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Very low sheet resistance and Shubnikov–de-Haas oscillations in two-dimensional electron gases at ultrathin binary AlN∕GaN heterojunctions
2. Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures
3. AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance
4. Polarization-engineered removal of buffer leakage for GaN transistors
5. High-mobility window for two-dimensional electron gases at ultrathin AlN∕GaN heterojunctions
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3. Exploration on the impact of barrier thickness, gate recess, and lateral scaling on AlGaN/GaN SRL HEMT on silicon for future RF power electronics;Journal of Materials Science: Materials in Electronics;2024-05
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