Polarization-engineered removal of buffer leakage for GaN transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3293454
Reference15 articles.
1. Unpassivated AlGaN-GaN HEMTs with minimal RF dispersion grown by plasma-assisted MBE on semi-insulating 6H-SiC substrates
2. Power Performance of AlGaN–GaN HEMTs Grown on SiC by Plasma-Assisted MBE
3. V-Gate GaN HEMTs for X-Band Power Applications
4. X- and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE
5. AlGaN/GaN High Electron Mobility Transistor with Thin Buffer Layers
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