Band Alignment of ScxAl1–xN/GaN Heterojunctions-Reference-Cited by-同舟云学术

Band Alignment of ScxAl1–xN/GaN Heterojunctions

Published:2020-11-04 Issue:46 Volume:12 Page:52192-52200
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Jin Eric N.¹^ORCID,Hardy Matthew T.²,Mock Alyssa L.¹,Lyons John L.³^ORCID,Kramer Alan R.¹,Tadjer Marko J.²,Nepal Neeraj²^ORCID,Katzer D. Scott²,Meyer David J.²

Affiliation:

1. NRC Research Associateship Programs, 500 Fifth Street, Washington, DC 20001, United States

2. Electronics Science and Technology Division, U.S. Naval Research Laboratory, 4555 Overlook Avenue, Southwest, Washington, DC 20375, United States

3. Center for Computational Materials Science, U.S. Naval Research Laboratory, 4555 Overlook Avenue, Southwest, Washington, DC 20375, United States

Funder

National Academy of Sciences

Office of Naval Research

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c15912

Reference68 articles.

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2. GaN Electronics

3. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

4. The new nitrides: layered, ferroelectric, magnetic, metallic and superconducting nitrides to boost the GaN photonics and electronics eco-system

5. Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films

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