2‐mm‐gate‐periphery GaN high electron mobility transistor s on SiC and Si substrates: A comparative analysis from a small‐signal standpoint-Reference-Cited by-同舟云学术

2‐mm‐gate‐periphery GaN high electron mobility transistor s on SiC and Si substrates: A comparative analysis from a small‐signal standpoint

Published:2021-03-30 Issue:6 Volume:31 Page:
ISSN:1096-4290
Container-title:International Journal of RF and Microwave Computer-Aided Engineering
language:en
Short-container-title:Int J RF Microw Comput Aided Eng

Author:

Jarndal Anwar¹^ORCID,Alim Mohammad Abdul²^ORCID,Raffo Antonio³^ORCID,Crupi Giovanni⁴^ORCID

Affiliation:

1. Department of Electrical Engineering University of Sharjah Sharjah United Arab Emirates

2. Department of Electrical and Electronic Engineering University of Chittagong Chittagong Bangladesh

3. Department of Engineering University of Ferrara Ferrara Italy

4. Department of Biomedical and Dental Sciences and Morphofunctional Imaging University of Messina Messina Italy

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Link

Reference41 articles.

5. Comparison of GaN HEMTs on diamond and SiC substrates;Felbinger JG;IEEE Trans Electron Dev,2007

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2. An efficient extrinsic capacitances extraction method for small‐signal GaN HEMT devices;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-04-26