Author:
Zhang Yachao,Wang Baiqi,Ma Jinbang,Yao Yixin,Chen Kai,Wang Xing,Xu Shengrui,Zhang Jincheng,Hao Yue
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference17 articles.
1. U.K. Mishra, L. Shen, T.E. Kazior, Y.F. Wu, GaN-based RF power devices and amplifiers, Proceedings of the IEEE. 96, 2008: 287–305. https://doi.org/10.1109/JPROC.2007.911060.
2. A review of GaN on SiC high electron-mobility power transistors and MMICs;Pengelly;IEEE Trans. Micro Theory Tech.,2012
3. High Breakdown Voltage AlGaN-GaN Power-HEMT Design and High Current Density Switching Behavior;Saito;IEEE Trans. Electron Devices,2003
4. High electron mobility and low sheet resistance in lattice-matched AlInN/AlN/GaN/AlN/GaN double-channel heterostructure;Zhang;Appl. Phys. Lett.,2009
5. Current instabilities in GaN-based devices;Daumiller;IEEE Electron Device Lett.,2001
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